Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films

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Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films

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Title: Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films
Author(s):
Park, Tae Joo;
Byun, Young-Byun;
Wallace, Robert M.;
Kim, Jiyoung
Date Created: 2017-02-03
Item Type: article
Keywords: Show Keywords
Abstract: Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O₃ formed the solid SiO₂ interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO₃ on increasing the O₃ pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La₂O₃, during which most of the La₂O₃ phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.
Publisher: American Institute of Physics Inc
ISSN: 0021-9606
Link to Related Resource: http://dx.doi.org/10.1063/1.4975083
Persistent Link: http://dx.doi.org/10.1063/1.4975083
http://hdl.handle.net/10735.1/6104
Bibliographic Citation: Park, T. J., Y. -C Byun, R. M. Wallace, and J. Kim. 2017. "Impurity and silicate formation dependence on O₃ pulse time and the growth temperature in atomic-layer-deposited La₂O₃ thin films." Journal of Chemical Physics 146(5), doi:10.1063/1.4975083
Terms of Use: CC BY 4.0 (Attribution)
©2017 The Authors
Sponsors: Future Semiconductor Device Technology Development Program (Grant No. 10045216); IT R & D program of MOTIE/KEIT (Grant No. 10048933); Basic Science Research Program through the NRF (National Research Foundation) of Korea funded by the MSIP (Ministry of Science, ICT & Future Planning) (No. 2015R1A5A1037548).

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CC BY 4.0 (Attribution) Except where otherwise noted, this item's license is described as CC BY 4.0 (Attribution)