Layered Metal Dichalcogenides Thin Films Deposited by Pulse Laser Deposition

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Layered Metal Dichalcogenides Thin Films Deposited by Pulse Laser Deposition

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Title: Layered Metal Dichalcogenides Thin Films Deposited by Pulse Laser Deposition
Author(s):
Serna Villacis, Martha Isabel;
0000-0002-6118-0506
Advisor: Quevedo-Lopez, Manuel A.
Minary-Jolandan, Majid
Date Created: 2017-12
Format: Dissertation
Keywords: Show Keywords
Abstract: Layered metal dichalcogenides (LMDs) have outstanding intrinsic properties and are considered potential candidate electronic materials for emerging devices in the fields of optoelectronics, piezoelectronics, and lately in spintronics. However, for the implementation of these materials on large scale applications, new synthesis methods that enable deposition with controlled area and geometry are needed. This work explores Pulsed Laser Deposition (PLD), as a new technique for the development of layered dichalcogenides materials. In particular, MoS2, SnSe2, and MoSe2 deposition parameters are explored, using materials characterization techniques such as X-ray photoelectron spectroscopy, Atomic Force Microscopy, Transmission Electron Microscopy, Raman Spectroscopy, Rutherford Backscattering Spectrometry, X-Ray diffraction, and in-situ Residual Gas Analysis – Mass Spectrometry. The structure, morphology and chemistry of each of the thin films is used to estimate the quality of the thin films. In addition, electrical characterization such as Hall effect measurements and the first SnSe2 PLD-grown/Silicon junction diodes are demonstrated.
Degree Name: PHD
Degree Level: Doctoral
Persistent Link: http://hdl.handle.net/10735.1/5682
Terms of Use: Copyright ©2017 is held by the author. Digital access to this material is made possible by the Eugene McDermott Library. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Type : text
Degree Program: Materials Science and Engineering

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