Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

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Title: Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor
Author(s):
Park, S. -H;
Lee, Jae-Gil;
Cho, C. -H;
Choi, Y. -I;
Kim, H.;
Cha, H. -Y
Item Type: article
Keywords: Show Keywords
Abstract: Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.
Publisher: Institute of Electronics Engineers of Korea
ISSN: 1598-1657
Link to Related Resource: http://dx.doi.org/10.5573/JSTS.2016.16.2.215
Persistent Link: http://hdl.handle.net/10735.1/5636
Bibliographic Citation: Park, S. -H, J. -G Lee, C. -H Cho, Y. -I Choi, et al. 2016. "Diode embedded AlGaN/GaN heterojuction field-effect transistor." Journal of Semiconductor Technology and Science 16(2), doi:10.5573/JSTS.2016.16.2.215
Terms of Use: CC BY-NC 4.0 (Attribution-NonCommercial)
©2016 The Authors
Sponsors: Ministry of Trade, Industry and Energy/Korea Evaluation Institute of Industrial Technology grant (10048931); National Research Foundation of Korea grant (2012M3A7B4035274.)

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CC BY-NC 4.0 (Attribution-NonCommercial) Except where otherwise noted, this item's license is described as CC BY-NC 4.0 (Attribution-NonCommercial)