Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)

DSpace/Manakin Repository

Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)

Show full item record

Title: Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)
Author(s):
Huang, Jie (UT Dallas);
Zhang, Hengji (UT Dallas);
Lucero, Antonio (UT Dallas);
Cheng, Lanxia (UT Dallas);
KC, Santosh (UT Dallas);
Wang, Jian (UT Dallas);
Hsu, Julia W. P. (UT Dallas);
Cho, Kyeongjae (UT Dallas);
Kim, Jiyoung (UT Dallas)
Item Type: article
Keywords: Show Keywords
Description: Includes supplementary material.
Abstract: Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self-limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 Å per cycle at 150°C. The hybrid materials exhibit n-type semiconducting behavior with a field effect mobility of approximately 5.7 cm² V⁻¹ s⁻¹ and an on/off ratio of over 103 following post annealing at 200°C in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis spectroscopy, transistor behavior, and Hall-effect measurements. Density functional theory (DFT) and many-body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n-channel materials as valuable candidates for efficient organic CMOS devices. © 2016.
Publisher: Royal Society of Chemistry
ISSN: 2050-7534
Persistent Link: http://dx.doi.org/10.1039/c5tc03714j
http://hdl.handle.net/10735.1/5612
Bibliographic Citation: Huang, J., H. Zhang, A. Lucero, L. Cheng, et al. 2016. "Organic-inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)." Journal of Materials Chemistry C 4(12), doi: 10.1039/c5tc03714jJ. Huang,
Terms of Use: ©2016 The Royal Society of Chemistry. This article may not be further made available or distributed.
Sponsors: NRF (2015M3D1A1068061)

Files in this item

Files Size Format View
JECS-2484-6914.36.pdf 2.917Mb PDF View/Open Article
JECS-2484-6914.36_S.pdf 1.517Mb PDF View/Open Supplement

This item appears in the following Collection(s)


Show full item record