X-band GaN MMIC inverse-F PA optimized for load modulation

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X-band GaN MMIC inverse-F PA optimized for load modulation

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Title: X-band GaN MMIC inverse-F PA optimized for load modulation
Author(s):
Martin, Daniel Nunez;
0000-0003-2859-1335
Advisor: Barton, Taylor W
O, Kenneth
Date Created: 2016-12
Format: Thesis
Keywords: Power amplifiers
Microwave integrated circuits
Gallium nitride
Modulation (Electronics)
Abstract: This thesis details the design and layout of a X-Band Inverse Class F power amplifier designed for active load modulation in an RF-input / RF-output outphasing system. The amplifier is designed to maximize efficiency given the load trajectory of an outphasing non-isolating lossless power combiner. An additional design goal is to maximize linearity of the system as a whole once the power combining and power splitting networks are designed. The amplifier was designed and simulated using ADS (Advanced Design Systems) in CREE’s (Wolfspeed’s) 0.25 µm process technology. Additionally, simulations were run using the EM simulation file, which was generated by running the ADS amplifier layout file through Momentum, within an idealized system setup in order to test theoretical performance within the system. The system was developed using ideal circuit components in order to ease the simulation and design of the amplifier. Future work will include the design and optimization of the combiner and splitter networks for a fully functioning and optimized system.
Degree Name: MSEE
Degree Level: Masters
Persistent Link: http://hdl.handle.net/10735.1/5329
Type : text
Degree Program: Electrical Engineering

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