Critical Behavior of Four-Terminal Conductance of Bilayer Graphene Domain Walls

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Critical Behavior of Four-Terminal Conductance of Bilayer Graphene Domain Walls

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Title: Critical Behavior of Four-Terminal Conductance of Bilayer Graphene Domain Walls
Author(s):
Wieder, Benjamin J.;
Zhang, Fan (UT Dallas);
Kane, C. L.
Item Type: Article
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Abstract: Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological, nevertheless have interesting physical properties, including valley-momentum locking. A junction where two domain walls intersect forms the analog of a quantum point contact. We study theoretically the critical behavior of this junction near the pinch-off transition, which is controlled by two separate classes of nontrivial quantum critical points. For strong interactions, the junction can host phases of unique charge and valley conductances. For weaker interactions, the low-temperature charge conductance can undergo one of two possible quantum phase transitions, each characterized by a specific critical exponent and a collapse to a universal scaling function, which we compute.
ISSN: 1098-0121
Persistent Link: http://hdl.handle.net/10735.1/5290
http://dx.doi.org/10.1103/PhysRevB.92.085425
Bibliographic Citation: Wieder, Benjamin J., Fan Zhang, and C. L. Kane. 2015. "Critical behavior of four-terminal conductance of bilayer graphene domain walls." Physical Review B 92(8), doi: 10.1103/PhysRevB.92.085425
Terms of Use: ©2015 American Physical Society

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