Oxidation of GaSb(100) and its Control Studied by Scanning Tunneling Microscopy and Spectroscopy

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Oxidation of GaSb(100) and its Control Studied by Scanning Tunneling Microscopy and Spectroscopy

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Title: Oxidation of GaSb(100) and its Control Studied by Scanning Tunneling Microscopy and Spectroscopy
Author(s):
Makela, J.;
Tuominen, M.;
Yasir, M.;
Kuzmin, M.;
Dahl, J.;
Punkkinen, M. P. J.;
Laukkanen, P.;
Kokko, K.;
Wallace, Robert M. (UT Dallas)
Item Type: article
Keywords: Show Keywords
Abstract: Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 x 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 x 3)-O free of gap states.
ISSN: 0003-6951
Persistent Link: http://dx.doi.org/10.1063/1.4928544
http://hdl.handle.net/10735.1/5270
Bibliographic Citation: Makela, J., M. Tuominen, M. Yasir, M. Kuzmin, et al. 2015. "Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy." Applied Physics Letters 107(6), doi:10.1063/1.4928544
Terms of Use: ©2015 AIP Publishing LLC.

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