In Situ Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al₂O₃ on AlGaN/GaN High Electron Mobility Transistors

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In Situ Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al₂O₃ on AlGaN/GaN High Electron Mobility Transistors

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Title: In Situ Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al₂O₃ on AlGaN/GaN High Electron Mobility Transistors
Author(s):
Qin, Xiaoye (UT Dallas);
Wallace, Robert M. (UT Dallas)
Item Type: article
Keywords: Show Keywords
Description: Includes supplementary information
Abstract: A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al₂O₃ on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H₂O precursor. The remote O₂ plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al₂O₃ growth on AlGaN/GaN devices. © 2015 AIP Publishing LLC.
Publisher: American Institute of Physics Inc.
ISSN: 00036951
Persistent Link: http://dx.doi.org/10.1063/1.4929818
http://hdl.handle.net/10735.1/5269
Bibliographic Citation: Qin, X., and R. M. Wallace. 2015. "In situ plasma enhanced atomic layer deposition half cycle study of Al₂O₃ on AlGaN/GaN high electron mobility transistors." Applied Physics Letters 107(8), doi: 10.1063/1.4929818
Terms of Use: ©2015 AIP Publishing LLC
Sponsors: Air Force office of Scientific Research (AFOSR) grant no. FA2386-14-1-4069.

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