Top-Gate Organic Field-Effect Transistors Fabricated on Shape-Memory Polymer Substrates

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Top-Gate Organic Field-Effect Transistors Fabricated on Shape-Memory Polymer Substrates

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Title: Top-Gate Organic Field-Effect Transistors Fabricated on Shape-Memory Polymer Substrates
Author(s):
Choi, Sangmoo;
Fuentes-Hernandez, Canek;
Wang, Cheng-Yin;
Wei, Andrew (UT Dallas);
Voit, Walter E. (UT Dallas);
Zhang, Yadong;
Barlow, Stephen;
Marder, Seth R.;
Kippelen, Bernard
Item Type: article
Keywords: Show Keywords
Abstract: We demonstrate top-gate organic field-effect transistors (OFETs) with a bilayer gate dielectric and doped contacts fabricated on shape-memory polymer (SMP) substrates. SMPs exhibit large variations in Young's modulus dependent on temperature and have the ability to fix two or more geometric configurations when a proper stimulus is applied. These unique properties make SMPs desirable for three-dimensional shape applications of OFETs. The electrical properties of OFETs on SMP substrates are presented and compared to those of OFETs on traditional glass substrates.
Publisher: SPIE-Int Soc Optical Engineering
ISBN: 978-1-62841-734-0
ISSN: 0277-786X
Persistent Link: http://dx.doi.org/10.1117/12.2188684
http://hdl.handle.net/10735.1/5094
Bibliographic Citation: Choi, Sangmoo, Canek Fuentes-Hernandez, Cheng-Yin Wang, Andrew Wei, et al. 2015. "Top-gate organic field-effect transistors fabricated on shape-memory polymer substrates." Proc. SPIE 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, 95680A, doi:10.1117/12.2188684
Terms of Use: ©2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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