Energies of the X- and L-Valleys in In(0.53)Ga(0.47) as from Electronic Structure Calculations

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Energies of the X- and L-Valleys in In(0.53)Ga(0.47) as from Electronic Structure Calculations

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Title: Energies of the X- and L-Valleys in In(0.53)Ga(0.47) as from Electronic Structure Calculations
Author(s):
Greene-Diniz, Gabriel;
Fischetti, Massimo V.;
Greer, J. C.
Item Type: article
Keywords: Show Keywords
Description: Includes erratum
Abstract: Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In(x)Ga(1-x)As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L-and X-valley minima are ~1 eV and ~1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.
Publisher: Amer Inst Physics
ISSN: 0021-8979
Persistent Link: http://dx.doi.org/10.1063/1.4940740
http://hdl.handle.net/10735.1/5082
Bibliographic Citation: Greene-Diniz, Gabriel, M. V. Fischetti, and J. C. Greer. 2016. "Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations." Journal of Applied Physics 119(5), doi:10.1063/1.4940740
Terms of Use: ©2015 American Institute of Physics
Sponsors: Sponsored in part by a grant from the European Union project DEEPEN (NMR 2013-1.4-1 grant agreement (604416)

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