CdCl₂ Treatment on Chemically Deposited CdS Active Layers in Thin Film Transistors

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CdCl₂ Treatment on Chemically Deposited CdS Active Layers in Thin Film Transistors

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Title: CdCl₂ Treatment on Chemically Deposited CdS Active Layers in Thin Film Transistors
Author(s):
Mendívil-Reynoso, T.;
Ramírez-Rodríguez, L. P.;
Quevedo-López, Manuel A;
Ramírez-Bon, R.;
Castillo, S. J.
Item Type: article
Keywords: Show Keywords
Abstract: In this work CdS layers were deposited by an ammonia-free chemical bath deposition process on SiO₂/p-Si substrates as active layers of thin film transistors (TFT). The electrical characteristics of the CdS-based TFT with different channel lengths were analyzed after thermal annealing in forming gas combined with previous immersion in CdCl₂ saturated solution. The annealing temperatures were 100, 200 and 300°C. To determine the effects of the CdCl₂ treatment on the device electrical parameters, devices with and without previous immersion in CdCl₂ were thermal annealed in forming gas and analyzed. The results show that the thermal annealing processes at 100 and 200 °C do not improve the electrical characteristics of the devices in both conditions. The annealing at 300 °C in both conditions improves noticeably the electrical performance of the devices attaining mobilities of the order of 5 cm²/Vs, threshold voltage in the range -1.5-10 V, swing voltage in the range of 1.65-9 V and I(on)/I(off) current ratio of the order 10³-10⁶.
Publisher: Electrochemical Science Group
ISSN: 1452-3981
Persistent Link: http://hdl.handle.net/10735.1/4589
Bibliographic Citation: Mendívil-Reynoso, T., L. P. Ramírez-Rodríguez, M. A. Quevedo-López, R. Ramírez-Bon, et al. 2015. "CdCl2 treatment on chemically deposited CdS active layers in thin film transistors." International Journal of Electrochemical Science 10(4): 3291-3300.
Terms of Use: CC-BY 4.0 (Attribution) License
©2015 The Authors

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