Atomically Thin Resonant Tunnel Diodes Built from Synthetic van der Waals Heterostructures

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Atomically Thin Resonant Tunnel Diodes Built from Synthetic van der Waals Heterostructures

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Title: Atomically Thin Resonant Tunnel Diodes Built from Synthetic van der Waals Heterostructures
Author(s):
Lin, Yu-Chuan;
Ghosh, Ram Krishna;
Addou, Rafik;
Lu, Ning;
Eichfeld, Sarah M.;
Zhu, Hui;
Li, Ming-Yang;
Peng, Xin;
Kim, Moon J.;
Li, Lain-Jong;
Wallace, Robert M.;
Datta, Suman;
Robinson, Joshua A.
Item Type: article
Keywords: Show Keywords
Description: Includes supplementary material
Abstract: Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS₂), molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂). The realization of MoS₂-WSe₂-graphene and WSe₂-MoS₂-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.;
Publisher: Nature Pub. Group
ISSN: 2041-1723
Persistent Link: http://dx.doi.org/10.1038/ncomms8311
http://hdl.handle.net/10735.1/4586
Bibliographic Citation: Lin, Yu-Chuan, Ram Krishna Ghosh, Rafik Addou, Ning Lu, et al. 2015. "Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures." Nature Communications 6: doi:10.1038/ncomms8311.
Terms of Use: CC-BY 4.0 (Attribution) License
©2015 The Authors

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