Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles

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Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles

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Title: Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles
Author(s):
Vandenberghe, William G.;
Fischetti, Massimo V.
Item Type: article
Keywords: Show Keywords
Abstract: The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: D(TA) = 4.1 x 10⁸ eV/cm, D(TO) = 1.2 x 10⁹ eV/cm, and D(LO) = 2.2 x 10⁹ eV/cm for BTBT in silicon and D(TA) = 7.8 x 10⁸ eV/cm and D(LO) = 1.3 x 10⁹ eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications.
Publisher: American Institute of Physics Inc.
ISSN: 0003-6951
Persistent Link: http://dx.doi.org/10.1063/1.4905591
http://hdl.handle.net/10735.1/4398
Terms of Use: © 2015 AIP Publishing LLC
Sponsors: "We acknowledge the support of the Nanoelectronics Research Initiative's (NRI's) Southwest Academy of Nanoelectronics (SWAN)."

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