Negative Differential Transconductance in Silicon Quantum Well Metal-Oxide-Semiconductor Field Effect/Bipolar Hybrid Transistors

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Negative Differential Transconductance in Silicon Quantum Well Metal-Oxide-Semiconductor Field Effect/Bipolar Hybrid Transistors

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Title: Negative Differential Transconductance in Silicon Quantum Well Metal-Oxide-Semiconductor Field Effect/Bipolar Hybrid Transistors
Author(s):
Naquin, Clint;
Lee, Mark;
Edwards, H.;
Mathur, G.;
Chatterjee, T.;
Maggio, K.
Item Type: Article
Keywords: Show Keywords
Abstract: Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (VG). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures > 200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on VG that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.
Publisher: American Institute Of Physics Inc.
ISSN: 0003-6951
Persistent Link: http://hdl.handle.net/10735.1/3733
http://dx.doi.org/10.1103/PhysRevLett.111.251302
Terms of Use: ©2014 AIP Publishing LLC
Sponsors: US National Science Foundation (grant no. ECCS-1403421) and Semiconductor Research Corporation through the Texas Analog Center of Excellence Task 1836.145.

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