A Crystalline Oxide Passivation for Al₂O₃/AlGaN/GaN

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A Crystalline Oxide Passivation for Al₂O₃/AlGaN/GaN

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Title: A Crystalline Oxide Passivation for Al₂O₃/AlGaN/GaN
Author(s):
Qin, Xiaoye;
Dong, Hong;
Kim, Jiyoung;
Wallace, Robert M.
Item Type: article
Keywords: Aluminum oxide
Aluminium gallium nitride
Gallium nitride
Crystalline oxide
Abstract: In situ X-ray photoelectron spectroscopy and low energy electron diffraction are performed to study the formation of a crystalline oxide on the AlGaN surface. The oxidation of the AlGaN surface is prepared by annealing and remote N₂+O₂ plasma pretreatments resulting in a stable crystalline oxide. The impact of the oxide on the interface state density is studied by capacitance voltage (C-V) measurements. It is found that a remote plasma exposure at 550⁰ C shows the smallest frequency dispersion. Crystalline oxide formation may provide a novel passivation method for high quality AlGaN/GaN devices.
Publisher: American Institute of Physics Inc.
ISSN: 0003-6951
Persistent Link: http://dx.doi.org/10.1063/1.4897641
http://hdl.handle.net/10735.1/4235
Terms of Use: ©2014 AIP Publishing LLC
Sponsors: "This work was supported by the Asian Office of Aerospace Research and Development (AOARD) through the Air Force office of Scientific Research (AFOSR) under Grant No. FA2384-11-1-0477. J. Kim also acknowledges financial support by the IT R&D program of MOTIE/KETI (Grant No. 10048933).

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