Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surface

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Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surface

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Title: Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surface
Author(s):
Longo, Roberto C.;
McDonnell, Stephen;
Dick, D.;
Wallace, Robert M.;
Chabal, Yves J.;
Owen, James H. G.;
Ballard, Josh B.;
Randall, John N.;
Cho, Kyeongjae
Item Type: article
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Abstract: In this work, the authors used density-functional theory methods and x-ray photoelectron spectroscopy to study the chemical composition and growth rate of HfO₂, Al₂O₃, and TiO₂ thin films grown by in-situ atomic layer deposition on both oxidized and hydrogen-terminated Si(001) surfaces. The growth rate of all films is found to be lower on hydrogen-terminated Si with respect to the oxidized Si surface. However, the degree of selectivity is found to be dependent of the deposition material. TiO₂ is found to be highly selective with depositions on the hydrogen terminated silicon having growth rates up to 180 times lower than those on oxidized Si, while similar depositions of HfO₂ and Al₂O₃ resulted in growth rates more than half that on oxidized silicon. By means of density-functional theory methods, the authors elucidate the origin of the different growth rates obtained for the three different precursors, from both energetic and kinetic points of view.
Publisher: A V S Amer Inst Physics
ISSN: 1071-1023
Persistent Link: http://dx.doi.org/10.1116/1.4864619
http://hdl.handle.net/10735.1/4087
Terms of Use: ©2014 American Vacuum Society

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