Investigation of Arsenic and Antimony Capping Layers, and Half Cycle Reactions During Atomic Layer Deposition of Al₂O₃ on GaSb(100)

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Investigation of Arsenic and Antimony Capping Layers, and Half Cycle Reactions During Atomic Layer Deposition of Al₂O₃ on GaSb(100)

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Title: Investigation of Arsenic and Antimony Capping Layers, and Half Cycle Reactions During Atomic Layer Deposition of Al₂O₃ on GaSb(100)
Author(s):
Zhernokletov, Dmitry M.;
Dong, Hong;
Brennan, Barry;
Kim, Jiyoung;
Wallace, Robert M.;
Yakimov, M.;
Tokranov, V.;
Oktyabrsky, S.
Item Type: article
Keywords: Gallium antimonide (GaSb)
Aluminium oxide (Al₂O₃)
Arsenic
Antimony
Abstract: In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al₂O₃. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al₂O₃ interface is investigated by "half-cycle" ALD reactions of trimethyl aluminum and deionized water.
ISSN: 0734-2101
Persistent Link: http://dx.doi.org/10.1116/1.4817496
http://hdl.handle.net/10735.1/3951
Terms of Use: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society.

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