Quantum Mechanical Solver for Confined Heterostructure Tunnel Field-Effect Transistors

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Quantum Mechanical Solver for Confined Heterostructure Tunnel Field-Effect Transistors

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Title: Quantum Mechanical Solver for Confined Heterostructure Tunnel Field-Effect Transistors
Author(s):
Verreck, Devin;
Van de Put, Maarten;
Soree, Bart;
Verhulst, Anne S.;
Magnus, Wim;
Vandenberghe, William G.;
Collaert, Nadine;
Thean, Aaron;
Groeseneken, Guido
Item Type: article
Keywords: Quantum mechanical tunneling
Heterostructure tunnel field-effect transistors
Heterojunctions
Abstract: Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.
Publisher: Amer Inst Physics
ISSN: 0021-8979
Persistent Link: http://dx.doi.org/10.1063/1.4864128
http://hdl.handle.net/10735.1/3930
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