MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics

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MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics

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Title: MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics
Author(s):
Azcatl, Angelica;
McDonnell, Stephen;
KC, Santosh;
Peng, Xin;
Dong, Hong;
Qin, Xiaoye;
Addou, Rafik;
Mordi, Greg I.;
Lu, Ning;
Kim, Jiyoung;
Kim, Moon J.;
Cho, Kyeongjae;
Wallace, Robert M.
Item Type: article
Keywords: Gigaelectronvolts (GeV)
Special relativity (Physics)
Dielectrics
Molybdenum disulfide
Abstract: The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon contamination from the MoS₂ surface and also functionalizes the MoS₂ surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS₂ surface and provides nucleation sites for atomic layer deposition of Al₂O₃. The enhanced nucleation is found to be dependent on the thin film deposition temperature.
ISSN: 0003-6951
Persistent Link: http://dx.doi.org/10.1063/1.4869149
http://hdl.handle.net/10735.1/3910

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