In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP

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In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP

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Title: In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP
Author(s):
Dong, Hong;
Santosh, KC;
Qin, Xiaoye;
Brennan, Barry;
McDonnell, Steven;
Zhernokletov, Dmitry;
Hinkle, Christopher L.;
Kim, Jiyoung;
Cho, Kyeongjie;
Wallace, Robert M.
Format: text
Item Type: article
Keywords: Oxides
S-passivated samples
Hafnium oxide
Indium phosphide
Abstract: The dependence of the "self cleaning" effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO₂ on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO₂ at different temperatures. An (NH₄)₂ S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200°C, 250°C and 300°C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.
Alternative Title: Journal of Applied Physics
ISSN: 0021-8979
Persistent Link: http://dx.doi.org/10.1063/1.4825218
http://hdl.handle.net/10735
Terms of Use: ©2013 AIP Publishing LLC

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