Electron Beam Excitation Method to Study Gas Phase During Etch Processes

DSpace/Manakin Repository

Electron Beam Excitation Method to Study Gas Phase During Etch Processes

Show full item record

Title: Electron Beam Excitation Method to Study Gas Phase During Etch Processes
Author(s):
Stephan Thamban, P. L., 1975-;
Padron-Wells, Gabriel;
Yun, Stuart;
Hosch, Jimmy W.;
Goeckner, Matthew J.
Format: text
Item Type: article
Keywords: Show Keywords
Description: "The authors thank the funding organizations, NSF (CBET-0922962) and Verity Instruments, Inc. for granting the financial award for this project."
Abstract: In process optical emission spectroscopy (OES) measurements, excitation mechanisms as dictated by the process plasma can be complex to analyze optical signals quantitatively. Applications of a new electron beam excitation method demonstrate distinct merits for plasma process diagnostics and process control. The electron energy control attribute of the method provides the means to optimize and monitor specific species optical emission in process chemistries to achieve process control such as endpoint. The authors present gas phase results from photoresist ash and SiO2 etch using O-2 and CF4/Ar discharges, respectively. The effluent density variations as measured with the e-beam method during process stages demonstrate process endpoint detection. Simultaneous measurements with FTIR spectroscopy and direct plasma OES is also presented for comparison.
ISSN: 1071-1023
Persistent Link: http://dx.doi.org/10.1116/1.4718724
http://hdl.handle.net/10735.1/3053
Terms of Use: © 2012 American Vacuum Society

Files in this item

Files Size Format View
ECS-FR-MJGoeckner-310710.88.pdf 1.076Mb PDF View/Open

This item appears in the following Collection(s)


Show full item record