In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN

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In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN

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title In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN
contributor.author Brennan, Barry
contributor.author Qin, Xiaoye
contributor.author Dong, Hong
contributor.author Kim, Jiyoung
contributor.author Wallace, Robert M.
contributor.VIAF 70133685 (Kim, J)
description.abstract Use the DOI address to see the article abstract. A subscription or fee may be necessary to view the article.
description.version Final published version
identifier.uri http://hdl.handle.net/10735.1/2500
identifier.bibliographicCitation Brennan, B., X. Qin, H. Dong, J. Kim, and R.M. Wallace. “In Situ Atomic Layer Deposition Half Cycle Study of Al2O 3 Growth on AlGaN.” Applied Physics Letters 101, no. 21 (2012).
subject Atomic layer deposition
subject X-ray photoelectron spectroscopy.
subject Atomic layer deposition
date.created 2012-11-10
date.issued 2012-11-10
publisher American Institute of Physics
relation.uri http://dx.doi.org/10.1063/1.4767520
rights © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
source Applied Physics Letters

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