In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN

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In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN

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Title: In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN
Author(s):
Brennan, Barry;
Qin, Xiaoye;
Dong, Hong;
Kim, Jiyoung;
Wallace, Robert M.
Date Created: 2012-11-10
Format: Text
Item Type: article
Keywords: Atomic layer deposition
X-ray photoelectron spectroscopy.
Atomic layer deposition
Abstract: Use the DOI address to see the article abstract. A subscription or fee may be necessary to view the article.
Publisher: American Institute of Physics
Source: Applied Physics Letters
Link to Related Resource: http://dx.doi.org/10.1063/1.4767520
Persistent Link: http://hdl.handle.net/10735.1/2500
Bibliographic Citation: Brennan, B., X. Qin, H. Dong, J. Kim, and R.M. Wallace. “In Situ Atomic Layer Deposition Half Cycle Study of Al2O 3 Growth on AlGaN.” Applied Physics Letters 101, no. 21 (2012).
Terms of Use: © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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