Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

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Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

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Title: Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon
Author(s):
Wallace, Robert M.;
McDonnell, Stephen
Date Created: 2012-09-13
Copyright Date: 2012-11
Format: Text
Item Type: article
Keywords: Supercapacitors
Dirac point
Nitrogen
Graphene
Abstract: Many researchers have used nitrogen (N) as a dopant and/or N-containing functional groups to enhance the capacitance of carbon electrodes of electrical double layer (EDL) capacitors. However, the physical mechanism(s) giving rise to the interfacial capacitance of the N-containing carbon electrodes is not well understood. Here, we show that the area-normalized capacitance of lightly N-doped activated graphene with similar porous structure increased from 6 μF cm -2 to 22 μF cm -2 with 0 at%, and 2.3 at% N-doping, respectively. The quantum capacitance of pristine single layer graphene and various N-doped graphene was measured and a trend of upwards shifts of the Dirac Point with increasing N concentration was observed. The increase in bulk capacitance with increasing N concentration, and the increase of the quantum capacitance in the N-doped monolayer graphene versus pristine monolayer graphene suggests that the increase in the EDL type of capacitance of many, if not all, N-doped carbon electrodes studied to date, is primarily due to the modification of the electronic structure of the graphene by the N dopant. It was further found that the quantum capacitance is closely related to the N dopant concentration and N-doping provides an effective way to increase the density of the states of monolayer graphene.
Language: English
ISSN: 1754-5692
Source: Energy and Environmental Science
Link to Related Resource: http://dx.doi.org/10.1039/c2ee23442d
Persistent Link: http://hdl.handle.net/10735.1/2336
Bibliographic Citation: Zhang, L. L., X. Zhao, H. Ji, M. D. Stoller, L. Lai, S. Murali, S. McDonnell, B. Cleveger, R. M. Wallace, and R. S. Ruoff. 2012. "Nitrogen Doping of Graphene and its Effect on Quantum Capacitance, and a New Insight on the Enhanced Capacitance of N-Doped Carbon." Energy and Environmental Science 5 (11): 9618-9625.
Terms of Use: © 2012 The Royal Society of Chemistry

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